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Standard [WITHDRAWN] Article is not orderable

ASTM F 996:2011

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

German title
Prüfverfahren zur Aufteilung einer durch Oxidhaftlöcher und Schnittstellenzustände bedingten gesamtdosisinduzierten MOSFET-Schwellenspannungsverschiebung in Komponenten mit Hilfe der Teilschwellenwerttechnik
Publication date
2011 reapproved: 2018
Original language
English
Pages
7
Publication date
2011 reapproved: 2018
Original language
English
Pages
7
DOI
https://dx.doi.org/10.1520/F0996-11R18

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ICS
31.080.30
DOI
https://dx.doi.org/10.1520/F0996-11R18
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