DIN EN 60749-34:2011-05

This part of DIN EN 60749 specifies a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor dies and assembly and bonding technology internal connectors. These load changes occur when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature. The power cycling test is intended to simulate typical applications in power electronics and is complementary to high temperature operating life (IEC 60749-23). Load changes induce other failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature using the two-fluid-baths method. Load changes cause ageing and therefore this test method is considered destructive. This standard cancels and replaces DIN EN 60749-34:2004. The significant changes with respect to the previous edition include: - the specification of tighter conditions for more accelerated power cycling in the wire bond fatigue mode; - information that under harsh power cycling conditions high current densities in a thin die metallization might initiate electromigration effects close to wire bonds. The responsible Committee is K 631 "Halbleiterbauelemente" ("Semiconductor devices") of the DKE (German Commission for Electrical, Electronic and Information Technologies) at DIN and VDE.