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Standard [CURRENT]

DIN EN 62047-26:2016-12

Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures (IEC 62047-26:2016); German version EN 62047-26:2016

German title
Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 26: Beschreibung und Messverfahren für Mikro-Rillen und Nadelstrukturen (IEC 62047-26:2016); Deutsche Fassung EN 62047-26:2016
Publication date
2016-12
Original language
German
Pages
29

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Publication date
2016-12
Original language
German
Pages
29
DOI
https://dx.doi.org/10.31030/2555908

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Overview

Structures in a micrometer scale require a particularly precise procedure and special methods for determining their geometry. If the procedure is incorrect and the measurement conditions are disregarded, results are obtained which lead to no or incorrect conclusions; this is all the more evident the finer the structures to be determined are. This part of the DIN EN 62047 series of standards therefore specifies descriptions of trench structure and needle structure in a micrometer scale. In addition, it provides examples of measurement for the geometry of both structures. For trench structures, this standard applies to structures with a depth of 1 μm to 100 μm; walls and trenches with respective widths of 5 μm to 150 μm; and aspect ratio of 0,006 7 to 20. For needle structures, the standard applies to structures with three or four faces with a height, horizontal width and vertical width of 2 μm or larger, and with dimensions that fit inside a cube with sides of 100 μm. This standard is applicable to the structural design of MEMS and geometrical evaluation after MEMS processes. The informative Annex A describes examples of measurement of geometries of groove and needle structures in a micrometer scale. The measurement principles, preparation for the specimens and the measurement procedure in relation to the geometry of the structures are described in summary form, using one or more characteristic examples of the geometry measurement of groove and needle structures. The responsible committee is DKE/K 631 "Halbleiterbauelemente" ("Semiconductor devices") of the DKE (German Commission for Electrical, Electronic and Information Technologies) at DIN and VDE.

ICS
31.080.01, 31.220.01
DOI
https://dx.doi.org/10.31030/2555908

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